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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/Dok2N
Repositorysid.inpe.br/marciana/2004/09.06.11.19   (restricted access)
Last Update2008:03.14.19.25.54 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/09.06.11.19.18
Metadata Last Update2018:06.05.01.28.43 (UTC) administrator
Secondary KeyINPE-11260-PRE/6702
ISBN/ISSN0268-1242
ISSN0268-1242
Citation KeyKudlekPrGuHiAbSi:1991:PhExSp
TitlePhotoluminescence and Excitation Spectroscopy of Znte/Gaas Epilayers Grown by hot-wall Epitaxy
ProjectTECMAT: Tecnologia de materiais
Year1991
MonthSept.
Access Date2024, May 18
Secondary TypePRE PI
Number of Files1
Size395 KiB
2. Context
Author1 Kudlek, G.
2 Presser, N.
3 Gutowski, J.
4 Hingerl, K.
5 Abramof, Eduardo
6 Sitter, H.
Resume Identifier1
2
3
4
5 8JMKD3MGP5W/3C9JGUH
Group1
2
3
4
5 LAS-INPE-BR
Affiliation1 Technische Universität Berlin, Institut für Festkörperphysik
2 Technische Universität Berlin, Institut für Festkörperphysik
3 Technische Universität Berlin, Institut für Festkörperphysik
4 Universität Linz, Institut für Experimentalphysik
5 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
6 Universität Linz, Institut für Experimentalphysik
JournalSemiconductor Science and Technology
Volume6
Number9A
PagesA90-A95
History (UTC)2006-09-28 22:36:41 :: administrator -> sergio ::
2008-01-07 12:50:01 :: sergio -> marciana ::
2008-03-14 19:25:54 :: marciana -> administrator ::
2018-06-05 01:28:43 :: administrator -> marciana :: 1991
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsSENSORS AND MATERIALS
Photoluminescence
Spectroscopy
Epitaxy
SENSORES E MATERIAIS
Fotoluminescência
Espectroscopia
Epitáxia
AbstractUsing reflection, photoluminescence and excitation spectroscopy we carried out systematic studies on the optical properties in the excitonic energy region of ZnTe/GaAs epilayers grown by hot-wall epitaxy (HWE). We calculate the strain magnitude, the light-hole (Ih) and heavy-hole (hh) energy shifts, and compare the theoretical values with the experimentally observed energy positions in ZnTe films of different thicknesses. The detected energy distance between the free excitons X(Ih) and X(hh) decreases with increasing layer thickness, indicating a relaxation of the thermally induced strain in the ZnTe layer. Additionally, we investigate the incorporation of different impurities, the electronic structure of the main acceptor-exciton complexes (A0, X) and the high-photon-density spectra of the ZnTe films. For increasing densities a biexciton band appears, and we determine the biexciton binding energy to amount to about 3.3 +/- 1.0 meV.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Photoluminescence and Excitation...
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4. Conditions of access and use
Languageen
Target Filephotol.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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